| PART |
Description |
Maker |
| DTAXXXXCA-R1 DTA113ZCA DTA114YCA DTA123JCA |
Epitaxial planar die construction.
|
Bruckewell Technology LTD
Bruckewell Technology L...
|
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| BZT52C30 BZT52C9V1 BZT52C5V1 |
1/2 Watt ZEBER DIODES Planar Die Construction
|
First Components International
First Components Intern...
|
| GBJ35005 |
Glass passivated die construction
|
Sangdest Microelectroni...
|
| SAC7.0 SAC12 |
Glass Passivated Die Construction
|
Shanghai Semitech Semic...
|
| MBR850 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| SB20100 |
Guard Ring Die Construction for Transient Protection
|
Sangdest Microelectroni...
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
